Chemical vapor deposition of tungsten Schottky diodes to 6H-SiC

Journal of the Electrochemical Society

Volumn 143, Issue 5, 1996, Pages 1662-1667

  Lundberg, Nils ^a   Östling, Mikael ^a   Tägtström, Per ^b   Jansson, Ulf ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; REACTIVE ION ETCHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; VOLTAGE MEASUREMENT; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE MEASUREMENTS; TUNGSTEN SCHOTTKY CONTACTS; VACUUM ANNEAL;

SCHOTTKY BARRIER DIODES;

EID: 0030142972     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836695     Document Type: Article

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