Tungsten, nickel, and molybdenum Schottky diodes with different edge termination

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 413-418

  Weiss, R ^a   Frey, L ^b   Ryssel, H ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Edge termination; Ion implantation; Schottky diodes

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ION IMPLANTATION; OHMIC CONTACTS; REFRACTORY METALS; SILICON CARBIDE; THERMODYNAMIC STABILITY;

EDGE TERMINATION;

SCHOTTKY BARRIER DIODES;

EID: 0035852244     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00527-X     Document Type: Article

References (6)

1. Properties of silicon carbid
2. Optimum semiconductor for high-power electronics
3. SiC device edge termination using finite area argon implantation
4. A planar, nearly ideal, SiC device edge termination