Thermal stability of Ru, Pd and Al schottky contacts to p- type 6H-SiC

Physica Status Solidi C: Conferences

Volumn 1, Issue 9, 2004, Pages 2264-2268

  Venter, A ^a   Samiji, M E ^a   Leitch, A W R ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; HIGH TEMPERATURE EFFECTS; METALLIZING; OHMIC CONTACTS; PALLADIUM; PLASMA APPLICATIONS; RUTHENIUM; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; THERMODYNAMIC STABILITY;

ELECTRON BOMBARDMENTS; HYDROGEN PLASMA TREATMENT; METAL INSULATOR SEMICONDUCTOR (MIS) DEFECTS;

SCHOTTKY BARRIER DIODES;

EID: 4444383354     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200404855     Document Type: Conference Paper

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