Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition

Physica B: Condensed Matter

Volumn 391, Issue 1, 2007, Pages 35-41

  Ramaiah, Kodigala Subba ^a   Bhat, I ^a   Chow, T P ^a   Kim, J K ^a   Schubert, E F ^a   Johnstone, D ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SEMETROL   (United States)

Author keywords

4 H SiC; AFM; C face; C N; Chemical vapor deposition; I V; Optical micrograph; Si face; XRD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HYDROGENATION; METALLIZING; OPTICAL MICROSCOPY; SILICON WAFERS; X RAY DIFFRACTION;

CAPACITANCE VOLTAGE (C-V) TECHNIQUES; MICROTUBES; OPTICAL MICROGRAPHS; SCREW DISLOCATIONS;

SILICON CARBIDE;

EID: 33846783160     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.08.051     Document Type: Article

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