Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

Journal of Applied Physics

Volumn 98, Issue 10, 2005, Pages

  Ramaiah, Kodigala Subba ^a   Bhat, I ^a   Chow, T P ^a   Kim, J K ^a   Schubert, E F ^a   Johnstone, D ^b   Akarca Biyikli, S ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; GROWTH MECHANISMS;

ATOMIC FORCE MICROSCOPY; CARBON; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; INTERFACIAL ENERGY; SURFACE ROUGHNESS;

SILICON CARBIDE;

EID: 28744448739     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2132520     Document Type: Article

References (17)

1. B. J. Johnson and M. A. Capano, J. Appl. Phys. 95, 5616 (2004).
2. G. Demir, T. E. Renfro, R. Glosser, and S. E. Saddow, Appl. Phys. Lett. 84, 3540 (2004).
3. K. C. Chang, L. M. Porter, J. Bentley, C. Y. Lu, and J. Cooper, Jr, J. Appl. Phys. 95, 8252 (2004).
4. Y. Wang, G. N. Ali, M. K. Mikhov, V. Vaidyanathan, B. J. Skromme, B. Raghothamachar, and M. Dudley, J. Appl. Phys. 97, 013540 (2005).
5. A. Itoh and H. Matsunami, Phys. Status Solidi A 162, 389 (1997).
6. H. Matsunami and T. Kimoto, Mater. Sci. Eng., R. 20, 125 (1997).
7. Z. Q. Fang, Appl. Phys. Lett. 78, 2178 (2001).
8. B. E. Landini, J. Electron. Mater. 29, 384 (2000).
9. E. H. Rhoderick and R. H. Williams, Metal Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), p. 99.
10. J. Crafton, P. A. Bames, J. R. Williams, and J. A. Edmond, Appl. Phys. Lett. 62, 384 (1993).
11. A. Kawasuso, Appl. Phys. Lett. 79, 3950 (2000).
12. K. Fujihira, T. Kimoto, and H. Matsunami, J. Cryst. Growth 255, 136 (2003).
13. T. A. G. Eberlein, R. Jones, and P. R. Briddon, Phys. Rev. Lett. 90, 225502-1 (2003).
14. C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janzen, J. L. Lindstrom, S. Savage, and N. Nordell, J. Appl. Phys. 81, 6155 (1997).
15. M. Weidner, T. Frank, G. Pensl, A. Kawasuso, H. Itoh, and R. Krause-Rehberg, Physica B 308-310, 633 (2001).
16. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schoner, and N. Nordell, Phys. Status Solidi A 162, 199 (1997).
17. T. Kimoto, Appl. Phys. Lett. 67, 2833 (1995).