Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode

Microelectronics Journal

Volumn 39, Issue 1, 2008, Pages 80-84

  Benmaza, H ^a   Akkal, B ^a   Abid, H ^a   Bluet, J M ^b   Anani, M ^a   Bensaad, Z ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Barrier height; Inhomogeneities; Ni SiC 6H material; Schottky diode

Indexed keywords

CONDUCTIVE MATERIALS; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES;

BARRIER HEIGHT; INHOMOGENEITIES; SCHOTTKY DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 38049031343     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.10.018     Document Type: Article

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