Calculations of tungsten suicide and carbide formation on SiC using the Gibbs free energy

Materials Science and Engineering: B

Volumn 72, Issue 1, 2000, Pages 13-18

  Seng, William F ^a   Barnes, Peter A ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

Carbide formation; Gibbs free energy; Interface reactions; Silicon carbide; Tungsten suicide

Indexed keywords

COMPUTATIONAL METHODS; GIBBS FREE ENERGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMODYNAMIC STABILITY; TUNGSTEN CARBIDE;

TUNGSTEN SILICIDE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0033882276     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00586-3     Document Type: Article

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