Electrical characterization of 4H-SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 8-9, 2008, Pages 783-787

  Buc, Dalibor ^a   Stuchlikova, Lubica ^a   Harmatha, Ladislav ^a   Hotovy, Ivan ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; VOLTAGE MEASUREMENT;

ELECTRICAL CHARACTERIZATION; SCHOTTKY CONTACTS; SILICON CARBIDE SUBSTRATES;

SILICON CARBIDE;

EID: 44149128214     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9409-z     Document Type: Conference Paper

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