Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 175-178

  Kim, Jihyun ^a   Ren, F ^a   Baca, A G ^b   Chung, G Y ^c   Pearton, S J ^d  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Sterling Semiconductor   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; TUNGSTEN COMPOUNDS;

SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0142216326     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00113-8     Document Type: Article

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