Physical and electrical characterization of WN Schottky contacts on 4H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 817-820

  Noblanc, O ^a   Arnodo, C ^a   Cassette, S ^a   Brylinski, C ^a   Kakanakova Georgieva, A ^b   Marinova, Ts ^b   Kassamakova, L ^c   Kakanakov, R ^c   Pecz B ^d   Sulyok, A ^d   Radnoczi G ^d  

^a THALES   (France)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^c Institute of Applied Physics   (Bulgaria)

^d INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

Schottky Rectifier; TEM; WN; XPS

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY CONTACTS; SCHOTTKY RECTIFIERS; TUNGSTEN CARBIDE; TUNGSTEN NITRIDE; TUNGSTEN SILICIDE;

ELECTRIC CONTACTS;

EID: 0031701669     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.817     Document Type: Article

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