Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

Journal of Applied Physics

Volumn 102, Issue 11, 2007, Pages

  Reshanov, S A ^a   Pensl, G ^a   Danno, K ^b   Kimoto, T ^b   Hishiki, S ^c   Ohshima, T ^c   Itoh, H ^c   Yan, Fei ^d   Devaty, R P ^d   Choyke, W J ^d  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b KYOTO UNIVERSITY   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

^d UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; FERMI LEVEL; MATHEMATICAL MODELS; SILICON CARBIDE;

MIDGAP DEFECTS; QUASI-FERMI LEVEL; REVERSE CURRENT; THEORETICAL MODEL;

SCHOTTKY BARRIER DIODES;

EID: 37149009558     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2818050     Document Type: Article

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