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Volumn 22, Issue 12, 2007, Pages 1287-1291
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Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CURRENT VOLTAGE CHARACTERISTICS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRON ENERGY LEVELS;
SEMICONDUCTING SILICON COMPOUNDS;
DEFECT CLUSTERS;
ELECTRON BEAM INDUCED CURRENT (EBIC);
EPITAXIAL GROWTH METHODS;
INHOMOGENEOUS DIODES;
SCHOTTKY BARRIER DIODES;
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EID: 36448932008
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/22/12/008 Document Type: Article |
Times cited : (26)
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References (17)
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