On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes

Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 288-294

  Chand, Subhash ^a   Kumar, Jitendra ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRON EMISSION; PALLADIUM COMPOUNDS; SILICON WAFERS; TEMPERATURE; X RAY DIFFRACTION;

BARRIER HEIGHTS; GAUSSIAN DISTRIBUTION; IDEALITY FACTOR; PALLADIUM SILICIDE; THERMIONIC EMISSION DIFFUSION MECHANISMS;

SCHOTTKY BARRIER DIODES;

EID: 0030190842     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362818     Document Type: Article

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