Fast epitaxial growth of high-purity 4H-SiC(0001) in a vertical hot-wall chemical vapor deposition

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 324-329

  Danno, Katsunori ^a   Kimoto, Tsunenobu ^a   Asano, Katsunori ^b   Sugawara, Yoshitaka ^b   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

C face; Deep level transient spectroscopy (DLTS); Epitaxial growth; High purity; SiC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; HYDROGEN; MOS DEVICES; MOSFET DEVICES;

C FACE; FLOW RATE; HIGH PURITY; POLYTYPE STABILITY;

SILICON CARBIDE;

EID: 18244369984     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0104-7     Document Type: Conference Paper

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