Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 369-374

  Defives, D ^a,b   Durand, O ^a   Wyczisk, F ^a   Noblanc, O ^a   Brylinski, C ^a   Meyer, F ^b  

^a THALES   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; METALLOGRAPHIC MICROSTRUCTURE; SCREW CONVEYORS; SILICON CARBIDE; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

SCHOTTKY CONTACTS;

METALLIC FILMS;

EID: 0034832102     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00469-X     Document Type: Article

References (7)

1. M.J. Bozack, Phys. Stat. Solid (b) 202 (1997) 549.
2. L.M. Porter, R.F. Davis, J.S. Bow, M.J. Kim, R.W. Carpenter, R.C. Glass, J. Mater. Res. 10 (3) (1995) 668.
3. R. Yakimova, C. Hemmingsson, M.F. Macmillan, T. Yakimov, E. Janzén, J. Electron. Mater. 27 (7) (1998) 871.
4. K.J. Schoen, J.M. Woodall, J.A. Cooper Jr., M.R. Melloch, IEEE Trans. Electron Devices 45 (7) (1998) 1595.
5. E.H. Rhoderick, R.H. Williams, Metal-semiconductor Contacts, Oxford Science.
6. A. Itoh, H. Matsunami, Phys. Stat. Solid (a) 162 (1997) 389.
7. D. Defives, O. Durand, F. Wyczisk, J. Olivier, O. Noblanc, C. Brylinski, in: Proceedings of the International Conference on Silicon Carbide and Related Materials, 1999, to be published.