Homoepitaxial growth of 4H-SiC on on-axis (0 0 0 1̄) C-face substrates by chemical vapor depositon

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 367-376

  Kojima, K ^a   Okumura, H ^a   Kuroda, S ^a   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Characterization; A1. Planar defects; A1. Surface structure; A1. X ray topography; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

DEFECT DENSITY; HOMOEPITAXIAL GROWTH; PLANAR DEFECTS; X-RAY TOPOGRAPHY;

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; ETCHING; LATTICE CONSTANTS; SCHOTTKY BARRIER DIODES; SILICON WAFERS; SUBSTRATES; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

SILICON CARBIDE;

EID: 4344584502     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.122     Document Type: Article

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