Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Aydin, Mehmet Enver ^a   Yildirim, Nezir ^b   Türüt, Abdulmecit ^b  

^a DICLE UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; INTERFACES (MATERIALS); SILICON CARBIDE; THERMIONIC EMISSION;

BARRIER HEIGHTS; RICHARDSON CONSTANT; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 34548448477     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769284     Document Type: Article

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