Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers

Journal of Crystal Growth

Volumn 297, Issue 2, 2006, Pages 265-271

  Chen, Wenzhou ^a   Lee, Kung yen ^b   Capano, Michael A ^a  

^a PURDUE UNIVERSITY   (United States)

^b NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

Author keywords

A1. Crystal morphology; A1. Doping; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DOPING (ADDITIVES); EPITAXIAL GROWTH; NITROGEN; SEMICONDUCTOR GROWTH;

CRYSTAL MORPHOLOGY; DEFECT DENSITIES; EPILAYERS; HOT-WALL EPITAXY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33845575886     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.033     Document Type: Article

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