XPS characterization of tungsten-based contact layers on 4H-SiC

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 180-183

  Kakanakova Georgieva, A ^a   Marinova, Ts ^a   Noblanc, O ^b   Arnodo, C ^b   Cassette, S ^b   Brylinski, C ^b  

^a INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

^b THALES   (France)

Author keywords

Interface reaction; WN SiC structure; X ray photoelectron spectroscopy

Indexed keywords

EID: 0004543196     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01199-7     Document Type: Article

References (5)

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3. J. Crofton, J. Ferrero, P. Barnes, et al., in: M. Rahman, C. Yang (Eds.), SPP Amorphous and Crystalline SiC II, Springer, Berlin, 1992, p. 176.
4. G. Samsonov, I. Vinitskii, Refractory Compounds (Handbook), Metalurgiya, Moscow, 1976 (in Russian).
5. O. Noblanc, C. Arnodo, S. Cassette, et al., Mater. Sci. Forum 264-268 (1998) 817.