The effects of the temperature and annealing on current-voltage characteristics of Ni/n-type 6H-SiC Schottky diode

Microelectronic Engineering

Volumn 85, Issue 3, 2008, Pages 631-635

  Sefaoglu A ^a   Duman, S ^a   Dogan S ^a   Gurbulak B ^a   Tuzemen S ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Metal semiconductor contact; Schottky barrier height; SiC

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN; NICKEL; SILICON CARBIDE; THERMAL EFFECTS; THERMIONIC EMISSION;

METAL SEMICONDUCTOR CONTACTS; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 39149133190     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.11.005     Document Type: Article

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