SiC and GaN bipolar power devices

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 277-301

  Chow, T P ^a   Khemka, V ^a   Fedison, J ^a   Ramungul, N ^a   Matocha, K ^a   Tang, Y ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; THERMAL CONDUCTIVITY;

ELECTRON DRIFT VELOCITY; GALLIUM NITRIDE; SILICON THEORY;

POWER ELECTRONICS;

EID: 0034140780     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00235-X     Document Type: Article

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