Electron capture, hydrogen release, and enhanced gain degradation in linear bipolar devices

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 2986-2991

  Fleetwood, Daniel M ^a   Schrimpf, Ronald D ^a   Pantelides, Sokrates T ^b   Pease, Ronald L ^c   Dunham, Gary W ^d  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c RLP Research   (United States)

^d NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

Enhanced low dose rate sensitivity (ELDRS); Hydrogen; Interface trap charge; Linear bipolar devices; Oxide trap charge; Vacancies

Indexed keywords

ATOMS; BIOLOGICAL RADIATION EFFECTS; BIPOLAR INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; DEGRADATION; DOSIMETRY; ELECTRONS; HYDROGEN; LEAD; NONMETALS; OXIDES; PROTONS; SILICON COMPOUNDS; TRANSISTORS; VACANCIES;

BIPOLAR DEVICES; COMMON SOURCES; CRITICAL EVALUATIONS; CROSS SECTIONS; ELECTRON CAPTURES; ELECTRON-CAPTURE CROSS SECTIONS; ENHANCED LOW-DOSE-RATE SENSITIVITY (ELDRS); GAIN DEGRADATIONS; HIGH DOSE RATES; HYDROGEN CONCENTRATIONS; HYDROGEN RELEASE; INTERFACE TRAP CHARGE; LINEAR BIPOLAR DEVICES; LOW CONCENTRATIONS; LOW DOSE RATES; LOWER PROBABILITIES; ORDERS OF MAGNITUDES; OXIDE TRAP CHARGE; PROTON RELEASE; VACANCY-RELATED DEFECTS;

SUBSTRATES;

EID: 58849096718     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2006485     Document Type: Conference Paper

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