Radiation response of bipolar transistors at various irradiation temperatures and electric biases: Modeling and experiment

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 1981-1987

  Zebrev, G I ^a   Pavlov, D Y ^a   Pershenkov, V S ^a   Nikiforov, A Y ^b   Sogoyan, A V ^b   Boychenko, D V ^b   Ulimov, V N ^c   Emelyanov, V V ^c  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b Specialized Electronic Systems   (Russian Federation)

^c RESEARCH INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Russian Federation)

Author keywords

Bipolar transistor; Enhanced low dose rate sensitivity (eldrs); Low dose rate irradiation; Model; Recombination

Indexed keywords

COMPUTER SIMULATION; IRRADIATION; MATHEMATICAL MODELS; THERMAL EFFECTS;

ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS); IRRADIATION TEMPERATURES;

BIPOLAR TRANSISTORS;

EID: 33748373631     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.877851     Document Type: Conference Paper

References (16)

1. E. W. Enlow, R. L. Pease, W. E. Combs, R. D. Schrimpf, and R. N. Nowlin, "Response of advanced bipolar processes to ionizing radiation," IEEE Trans. Nucl. Sci., vol. 38, pp. 1342-1351, 1991.
2. R. N. Nowlin, E. N. Enlow, R. D. Schrimpf, and W. E. Combs, "Trends in the total-dose response of modern bipolar transistors," IEEE Trans. Nucl. Sci., vol. 39, pp. 2026-2035, 1992.
3. S. C. Witczak, "Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures," IEEE Trans. Nucl. Sci., vol. 44, p. 1989, 1997.
4. A. H. Johnston, B. G. Rax, and C. I. Lee, "Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rate," IEEE Trans. Nucl. Sci., vol. 42, pp. 1650-1659, 1995.
5. D. M. Fleetwood, S. L. Kosier, R. N. Nowlin, R. D. Schrimpf, J. R. A. Reber, M. Delaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates," IEEE Trans. Nucl. Sci., vol. 41, pp. 1871-1883, 1994.
6. D. M. Fleetwood, L. C. Riewe, J. R. Schwank, S. C. Witczak, and R. D. Schrimpf, "Radiation effects at low electric fields in thermal, SIMOX, and bipolar - base oxides," IEEE Trans. Nucl. Sci., vol. 43, pp. 2537-2546, 1996.
7. S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, and S. T. Pantelides, "Physical model for enhanced interface - Trap formation at low dose rates," IEEE Trans. Nucl. Sci., vol. 49, pp. 2650-2655, 2002.
8. V. V. Belyakov, V. S. Pershenkov, A. V. Shalnov, and I. N. Shvetzov-Shilovsky, "Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors," IEEE Trans. Nucl. Sci., vol. 42, pp. 1660-1666, 1995.
9. H. P. Hjalmarson, R. L. Pease, S. C. Witczak, M. R. Shaneyfelt, J. R. Schwank, A. H. Edwards, C. H. Hembree, and T. R. Mattson, "Mechanisms for radiation dose-rate sensitivity of bipolar transistors," IEEE Trans. Nucl. Sci., Dec. 2003.
10. N. F. Mott and E. A. Davis, Electron Processes in Non - Crystalline Materials. Oxford, U.K.: Oxford Univ. Press, 1979.
11. J. M. Bendetto and H. E. Boesch, "The relationship between Co-60 and 10-keV x-ray damage in MOS devices," IEEE Trans. Nucl. Sci., vol. 33, pp. 1318-1323, 1986.
12. P. V. Dressendorfer, Basic mechanisms for new millennium 1998, NSREC Short Course.
13. B. K. Ridley, Quantum processes in semiconductors. Oxford, U.K.: Clarendon Press, 1982.
14. R. C. Hughes, "Time resolved hole transport in a-SiO2," Phys. Rev., vol. B15, pp. 2012-2020, 1977.
15. M. R. Shaneyfelt, R. L. Pease, J. R. Schwank, M. C. Maher, G. L. Hash, D. M. Fleetwood, P. E. Dodd, C. A. Reber, S. C. Witczak, L. C. Riewe, H. P. Hjalmarson, J. C. Banks, B. L. Doyle, and J. A. Knapp, "Impact of passivation layers on ELDRS and pre-irradiation elevated temperature stress effects in bipolar linear ICs," IEEE Trans. Nucl. Sci., vol. 49, pp. 3171-3179, 2002.
16. D.M. Fleetwood, "Radiation-Induced Charge Neutralization and Interface-Trap Buildup in MOS Devices," J. Appl. Phys., vol. 67, no. 580, 1990.