Elimination of enhanced low-dose-rate sensitivity in linear bipolar devices using silicon-carbide passivation

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 2027-2032

  Shaneyfelt, Marty R ^a,b   Maher, Michael C ^a,c   Camilletti, Robert C ^a,d   Schwank, James R ^a,b   Pease, Ronald L ^a,e   Russell, Brian A ^a,d   Dodd, Paul E ^a,b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^d DOW CHEMICAL COMPANY   (United States)

^e RLP Research   (United States)

Author keywords

Enhanced low dose rate sensitivity (eldrs); Hardness assurance testing; Integrated circuit reliability; Integrated circuit testing; Linear bipolar integrated circuits; Mechanical stress; Passivation layers; Pre irradiation elevated temperature stress

Indexed keywords

ENHANCED LOW-DOSE-RATE SENSITIVITY (ELDRS); HARDNESS ASSURANCE TESTING; INTEGRATED CIRCUIT RELIABILITY; LINEAR BIPOLAR INTEGRATED CIRCUITS; MECHANICAL STRESS; PASSIVATION LAYERS;

ENCAPSULATION; INTEGRATED CIRCUIT TESTING; PASSIVATION; SILICON CARBIDE;

BIPOLAR INTEGRATED CIRCUITS;

EID: 33748347314     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.877981     Document Type: Conference Paper

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