Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2

Physical Review Letters

Volumn 89, Issue 28 I, 2002, Pages

  Lu, Zhong Yi ^a   Nicklaw, C J ^b   Fleetwood, D M ^a,b   Schrimpf, R D ^b   Pantelides, S T ^a,c  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CALCULATIONS; CHEMICAL BONDS; CRYSTALLINE MATERIALS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ENERGY GAP; MOLECULAR DYNAMICS; OXYGEN; PROBABILITY DENSITY FUNCTION; QUARTZ; STATISTICAL MECHANICS;

AMORPHOUS SILICA; CHARGE TRANSPORT; CRYSTALLINE QUARTZ; DENSITY FUNCTIONAL THEORY; LOCAL DENSITY APPROXIMATION; OXYGEN VACANCY;

SILICA;

EID: 0037207338     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (31)

1. R. A. Weeks, J. Appl. Phys. 27, 1376 (1956).
2. D. L. Griscom, Phys. Rev. B 20, 1823 (1979).
3. F.J. Fegil, W. B. Fowler, and K. L. Yip, Solid State Commun. 14, 225 (1974).
4. J. K. Rudra and W. B. Fowler, Phys. Rev. B 35, 8223 (1987).
5. M. Boero, A. Pasquarello, J. Sarnthein, and R. Car, Phys. Rev. Lett. 78, 887 (1997).
6. W. L. Warren et al., J. Electrochem. Soc. 139, 872 (1992)
7. J. F. Conley et al., J. Appl. Phys. 76, 2872 (1994)
8. W. L. Warren et al., IEEE Trans. Nucl. Sci. 40, 1755 (1993).
9. W. L. Warren et al., IEEE Trans. Nucl. Sci. 41, 1817 (1994).
10. E. P. O'Reilly and J. Robertson, Phys. Rev. B 27, 3780 (1983).
11. P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984)
12. T. H. Ning and H. N. Yu, ibid. 45, 5373 (1974)
13. D. M. Fleetwood and N. S. Saks, ibid. 79, 1583 (1996).
14. P. M. Lenahan and J. M. Conley, Jr., IEEE Trans. Nucl. Sci. 45, 2413 (1998)
15. J. R. Chavez et al., IEEE Trans. Nucl. Sci. 44, 1799 (1997).
16. J.R. Schwank et al., IEEE Trans. Nucl. Sci. 31, 1434 (1984).
17. A. J. Lelis, H. E. Boesch, T. R. Oldham, and F. B. McLean, IEEE Trans. Nucl. Sci. 35, 1186 (1988)
18. A. J. Lelis, T. R. Oldham, H. E. Boesch, and F. B. McLean, ibid. 36, 1808 (1989)
19. S. P. Karna et al., IEEE Trans. Nucl. Sci. 47, 2316 (2000).
20. D. M. Fleetwood et al., Appl. Phys. Lett. 74, 2969 (1999)
21. D. M. Fleetwood et al., IEEE Trans. Nucl. Sci. 40, 1323 (1993).
22. 3.
23. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980)
24. J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
25. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
26. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976).
27. The creation procedure is documented by J. Sarnthein, A. Pasquarello, and R. Car, Phys. Rev. Lett. 74, 4682 (1995)
28. J. Sarnthein, A. Pasquarello, and R. Car, Phys. Rev. Lett. 52, 12690 (1990).
29. F. B. McLean, H. E. Boesch, Jr., and T. R. Oldham, Ionizing Radiation Effects in MOS Devices and Circuits, edited by T. P. Ma and P. V. Dressendorfer (Wiley, New York, 1989), pp. 87-192.
30. V. V. Afanas'ev and A. Stesmans, Europhys. Lett. 53, 233 (2001).
31. S. T. Pantelides et al., IEEE Trans. Nucl. Sci. 47, 2262 (2000).