Total dose and dose rate response of an AD590 temperature transducer

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1049-1054

  Pease, Ronald L ^a,b   Dunham, Gary W ^a,c   Seiler, John E ^a,c   Platteter, Dale G ^a,c   McClure, Steven S ^a,d  

^a IEEE

^b RLP Research   (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Dose rate; Enhanced low dose rate sensitivity; Radiation effects; Temperature transducer; Total ionizing dose

Indexed keywords

ANALOG COMPUTERS; DOSIMETRY; HYDROGEN; IRRADIATION; RADIATION EFFECTS; SENSITIVITY ANALYSIS;

DOSE RATE; ENHANCED LOW-DOSE-RATE SENSITIVITY; PACKAGE SENSITIVITY;

TRANSDUCERS;

EID: 34548065926     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.892262     Document Type: Conference Paper

References (8)

1. R. L. Pease, S. McClure, A. H. Johnston, J. Gorelick, T. L. Turflinger, M. Gehlhausen, J. Krieg, T. Carriere, and M. Shaneyfelt, "An updated data compendium, of enhanced low dose rate sensitive (ELDRS) bipolar linear circuits," in Proc. IEEE Radiation Effects Data Workshop Rec., Vancouver, BC, Canada, Jul. 16-20, 2001, pp. 127-133.
2. R. M. Rivas, A. H. Johnston, T. F. Miyahira, B. G. Rax, and M. D. Wiedeman, "Test results of total ionizing dose conducted at the jet propulsion laboratory," in Proc IEEE Radiation Effects Data Workshop Rec., Jul. 22, 2004, pp. 36-41.
3. M. P. Timko, "A two-terminal IC temperature transducer," IEEE J. Solid-State Circuits, vol. SC-11, no. 6, pp. 784-788, Dec. 1976.
4. R. A. Kohler, R. A. Kushner, and K. H. Lee, "Total dose radiation hardness of MOS devices in hermetic ceramic packages," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1492-1496, Dec. 1988.
5. R. K. Lowry, "Sources of volatile gases hazardous to hermetic electronic enclosures," IEEE Trsns. Electron. Packag. Manuf., vol. 22, no. 4, pp. 319-323, Oct. 1999.
6. M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, R. L. Pease, J. A. Felix, P. E. Dodd, and M. C. Maher, "Annealing behavior of bipolar linear devices with enhanced low-dose-rate sensitivity," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3172-3177, Dec. 2004.
7. R. L. Pease, D. G. Platteter, G. W. Dunham, J. E. Seiler, H. J. Barnaby, R. D. Schrimpf, M. R. Shaneyfelt, M. C. Maher, and R. N. Nowlin, "Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3773-3780, Dec. 2004.
8. M. R. Shaneyfelt, R. L. Pease, J. R. Schwank, M. C. Maher, G. L. Hash, D. M. Fleetwood, P. E. Dodd, C. A. Reber, S. C. Witczak, L. C. Riewe, H. P. Hjalmarson, J. C. Banks, B. L. Doyle, and J. A. Knapp, "Impact of passivation layers on enhanced low-dose-rate sensitivity and thermalstress effects in linear bipolar ICs," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3171-3179, Dec. 2002.