Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3773-3780

  Pease, Ronald L ^a   Platteter, Dale G ^b   Dunham, G W ^b   Seiler, J E ^b   Barnaby, H J ^c   Schrimpf, R D ^d   Shaneyfelt, Marty R ^e   Maher, M C ^f   Nowlin, R N ^g  

^a RLP Research   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c UNIVERSITY OF ARIZONA   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e SANDIA NATIONAL LABORATORIES   (United States)

^f NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^g NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Enhanced low dose rate sensitivity (ELDRS); P glass nitride

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITORS; IRRADIATION; MATHEMATICAL MODELS; OXIDES; PASSIVATION;

ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS); GATE VOLTAGES; INTERFACE TRAPS;

DOSIMETERS;

EID: 11044231582     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839258     Document Type: Conference Paper

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