Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 1913-1919

  Chen, X J ^a,b   Barnaby, H J ^a,b   Vermeire, B ^a,b   Holbert, K ^a,b   Wright, D ^a,b   Pease, R L ^a,c   Dunham, G ^a,d   Platteter, D G ^a,d   Seiler, J ^a,d   McClure, S ^a,e   Adell, P ^a,e  

^a IEEE   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c RLP Research   (United States)

^d NAVAL SURFACE WARFARE CENTER   (United States)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Bipolar oxide; Gated bipolar devices; Hydrogen; Interface traps; Radiation induced

Indexed keywords

BIPOLAR OXIDES; INTERFACE TRAPS;

CONCENTRATION (PROCESS); DEGRADATION; HYDROGEN; MATHEMATICAL MODELS; RADIATION EFFECTS; REACTION KINETICS;

BIPOLAR TRANSISTORS;

EID: 37249086740     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.909708     Document Type: Conference Paper

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