Defect generation by hydrogen at the Si- SiO2 interface

Physical Review Letters

Volumn 87, Issue 16, 2001, Pages

  Rashkeev, S N ^a   Fleetwood, D M ^a,b   Schrimpf, R D ^b   Pantelides, S T ^a,c  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CARRIER CONCENTRATION; EXTRAPOLATION; FERMI LEVEL; HAMILTONIANS; HYDROGEN; HYDROGEN BONDS; PASSIVATION; POSITIVE IONS; SILICA; SILICON;

DEPASSIVATION; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; NEUTRALIZATION;

INTERFACES (MATERIALS);

EID: 25044467847     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.87.165506     Document Type: Article

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