Hydrogen electrochemistry and stress-induced leakage current in silica

Physical Review Letters

Volumn 83, Issue 2, 1999, Pages 372-375

  Blöchl, Peter E ^a   Stathis, James H ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTROCHEMISTRY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; FUNCTIONS; HYDROGEN; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOLECULAR STRUCTURE; OXYGEN; SILICA;

DENSITY FUNCTIONAL THEORY (DFT); PROJECTOR AUGMENTED WAVE METHOD; STRESS-INDUCED LEAKAGE CURRENTS (SILC);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037852815     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.372     Document Type: Article

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