Hydrogen-related defects in irradiated SiO 2

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2289-2296

  Bunson, P E ^a,b,c   Di Ventra, M ^d,e   Pantelides, S T ^d   Fleetwood, D M ^a,b   Schrimpf, R D ^a,b  

^a IEEE   (United States)

^b GRINNELL COLLEGE   (United States)

^c VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DENSITY FUNCTIONAL THEORY; HYDROGEN-RELATED DEFECTS; INTERFACE TRAPS; OXYGEN VACANCIES;

DEFECTS; ELECTRON TRAPS; HYDROGEN; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOS DEVICES; PARAMAGNETIC RESONANCE; PASSIVATION; PROBABILITY DENSITY FUNCTION; PROTON IRRADIATION; SILICA;

RADIATION DAMAGE;

EID: 0034450393     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903767     Document Type: Conference Paper

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