Mechanisms for Radiation Dose-Rate Sensitivity of Bipolar Transistors

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1901-1909

  Hjalmarson, Harold P ^a   Pease, Ronald L ^b   Witczak, Steven C ^c   Shaneyfelt, Marty R ^a   Schwank, James R ^a   Edwards, Arthur H ^d   Hembree, Charles E ^a   Mattsson, Thomas R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b RLP Research   (United States)

^c AEROSPACE CORPORATION   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Bimolecular reaction; Bipolar junction transistor; Cracking; Dimerization; Dose rate; ELDRS; Excess base current; Hole; Hydrogen; Interface trap; Kinetics; Proton; Radiation; Recombination; Silicon dioxide

Indexed keywords

CRACKING (CHEMICAL); DIMERIZATION; DOSIMETRY; ELECTRONIC STRUCTURE; HYDROGEN; MOLECULAR DYNAMICS; PROBLEM SOLVING; PROTONS; RADIATION EFFECTS; RADIOLYSIS; REACTION KINETICS; SILICA;

BIMOLECULAR REACTIONS; DOSE RATE; ELDRS; EXCESS BASE CURRENT; HOLE; INTERFACE TRAP; RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 1242310313     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821803     Document Type: Conference Paper

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