-
1
-
-
0035166250
-
An updated compendium of enhanced low dose rate sensitive (ELDRS) bipolar linear circuits
-
R. L. Pease, S. S. McClure, A. H. Johnston, J. L. Gorelick, T. L. Turflinger, M. Gehlhausen, J. F. Krieg, T. Carriere, M. R. Shaneyfelt, "An updated compendium of enhanced low dose rate sensitive (ELDRS) bipolar linear circuits," 2001 IEEE Radiation Effects Data Workshop Record, pp. 127-133.
-
2001 IEEE Radiation Effects Data Workshop Record
, pp. 127-133
-
-
Pease, R.L.1
McClure, S.S.2
Johnston, A.H.3
Gorelick, J.L.4
Turflinger, T.L.5
Gehlhausen, M.6
Krieg, J.F.7
Carriere, T.8
Shaneyfelt, M.R.9
-
2
-
-
0036947714
-
Impact of passivation layers on enhanced low-dose-rate sensitivity and thermal-stress effects in linear bipolar ICs
-
Dec.
-
M. R. Shaneyfelt, R. L. Pease, J. R. Schwank, M. C. Maher, G. L. Hash, D. M. Fleetwood, P. E. Dodd, C. A. Reber, S. C. Witczak, L. C. Riewe, H. P. Hjalmarson, J. C. Banks, B. L. Doyle, J. A. Knapp, "Impact of passivation layers on enhanced low-dose-rate sensitivity and thermal-stress effects in linear bipolar ICs," IEEE Trans. Nucl. Sci., Vol. 49, No. 6, pp. 3171-3179, Dec. 2002.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, Issue.6
, pp. 3171-3179
-
-
Shaneyfelt, M.R.1
Pease, R.L.2
Schwank, J.R.3
Maher, M.C.4
Hash, G.L.5
Fleetwood, D.M.6
Dodd, P.E.7
Reber, C.A.8
Witczak, S.C.9
Riewe, L.C.10
Hjalmarson, H.P.11
Banks, J.C.12
Doyle, B.L.13
Knapp, J.A.14
-
3
-
-
11044231582
-
Characterzation of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral pnp transistor structures
-
submitted for publication, Dec.
-
R. L. Pease, D. G. Platteter, G. W. Dunham J. E. Seiler, H. J. Barnaby, R. D. Schrimpf, M. R. Shaneyfelt, M. C. Maher, R. N. Nowlin, "Characterzation of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral pnp transistor structures," submitted for publication, IEEE Trans. Nucl. Sci., Dec. 2004.
-
(2004)
IEEE Trans. Nucl. Sci.
-
-
Pease, R.L.1
Platteter, D.G.2
Dunham, G.W.3
Seiler, J.E.4
Barnaby, H.J.5
Schrimpf, R.D.6
Shaneyfelt, M.R.7
Maher, M.C.8
Nowlin, R.N.9
-
4
-
-
1242310332
-
Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices
-
Dec.
-
M. R. Shaneyfelt, R. L. Pease, M. C. Maher, J. R. Schwank, S. Gupta, P. E. Dodd, L. C. Riewe, "Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices," IEEE Trans. Nucl. Sci., Vol. 50, No. 6, pp. 1784-1790, Dec. 2003.
-
(2003)
IEEE Trans. Nucl. Sci.
, vol.50
, Issue.6
, pp. 1784-1790
-
-
Shaneyfelt, M.R.1
Pease, R.L.2
Maher, M.C.3
Schwank, J.R.4
Gupta, S.5
Dodd, P.E.6
Riewe, L.C.7
-
5
-
-
0021587257
-
Physical-mechanisms contributing to device rebound
-
J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, "Physical-mechanisms contributing to device rebound," IEEE Trans. Nucl. Sci., Vol. 31, No. 6, pp. 1434-1438, 1984.
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.31
, Issue.6
, pp. 1434-1438
-
-
Schwank, J.R.1
Winokur, P.S.2
McWhorter, P.J.3
Sexton, F.W.4
Dressendorfer, P.V.5
Turpin, D.C.6
-
6
-
-
0024891801
-
An improved standard total dose test for CMOS space electronics
-
Dec.
-
D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. L. Pease, "An improved standard total dose test for CMOS space electronics," IEEE Trans. Nucl. Sci., Vol. 36, No. 6, pp. 1963-1970, Dec. 1989.
-
(1989)
IEEE Trans. Nucl. Sci.
, vol.36
, Issue.6
, pp. 1963-1970
-
-
Fleetwood, D.M.1
Winokur, P.S.2
Riewe, L.C.3
Pease, R.L.4
-
7
-
-
11044234572
-
Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity
-
submitted for publication, Dec.
-
M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, R. L. Pease, J. A. Felix, P. E. Dodd, and M. C. Maher, "Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity," submitted for publication, IEEE Trans. Nucl. Sci., Dec. 2004.
-
(2004)
IEEE Trans. Nucl. Sci.
-
-
Shaneyfelt, M.R.1
Schwank, J.R.2
Fleetwood, D.M.3
Pease, R.L.4
Felix, J.A.5
Dodd, P.E.6
Maher, M.C.7
-
8
-
-
0018468948
-
Two-stage process for buildup of radiation-induced interface states
-
May
-
P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, "Two-Stage Process for Buildup of Radiation-Induced Interface States," J. Appl. Phys., Vol. 50, No. 5, pp. 3492-3495, May 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, Issue.5
, pp. 3492-3495
-
-
Winokur, P.S.1
Boesch Jr., H.E.2
McGarrity, J.M.3
McLean, F.B.4
-
9
-
-
0019242095
-
A framework for understanding radiation-induced interface states in SiO2 MOS structures
-
Dec.
-
F. B. McLean, "A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures," IEEE Trans. Nucl. Sci., Vol. 27, No. 6, pp. 1651-1657, Dec. 1980.
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.27
, Issue.6
, pp. 1651-1657
-
-
McLean, F.B.1
-
10
-
-
0024167906
-
Formation of interface traps in MOSFETs during annealing following low temperature irradiation
-
Dec.
-
N. S. Saks, R. B. Klein, and D. L. Griscom, "Formation of Interface Traps in MOSFETs During Annealing Following Low Temperature Irradiation," IEEE Trans. Nucl. Sci., Vol. 35, No. 6, pp. 1234-1240, Dec. 1988.
-
(1988)
IEEE Trans. Nucl. Sci.
, vol.35
, Issue.6
, pp. 1234-1240
-
-
Saks, N.S.1
Klein, R.B.2
Griscom, D.L.3
-
11
-
-
0025590783
-
Observation of H+ motion during interface trap formation
-
Dec.
-
N. S. Saks and D. B. Brown, "Observation of H+ Motion During Interface Trap Formation," IEEE Trans. Nucl. Sci., Vol. 37, No. 6, pp. 1624-1631, Dec. 1990.
-
(1990)
IEEE Trans. Nucl. Sci.
, vol.37
, Issue.6
, pp. 1624-1631
-
-
Saks, N.S.1
Brown, D.B.2
-
12
-
-
84939721970
-
Interface-trap buildup rates in wet and dry oxides
-
Dec.
-
M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, K. L. Hughes, and G. L. Hash, "Interface-Trap Buildup Rates in Wet and Dry Oxides," IEEE Trans. Nucl. Sci., Vol. 39, No. 6, pp. 2244-2251, Dec. 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, Issue.6
, pp. 2244-2251
-
-
Shaneyfelt, M.R.1
Schwank, J.R.2
Fleetwood, D.M.3
Winokur, P.S.4
Hughes, K.L.5
Hash, G.L.6
-
13
-
-
0023531269
-
The role of hydrogen in radiation induced defect formation in polysilicon gate MOS devices
-
Dec.
-
J. R. Schwank, D. M. Fleetwood, P. S. Winokur, P. V. Dressendorfer, D. C. Turpin, and D. T. Sanders, "The Role of Hydrogen in Radiation Induced Defect Formation in Polysilicon Gate MOS Devices," IEEE Trans. Nucl. Sci. Vol. 34, No. 6, pp. 1152-1158, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, Issue.6
, pp. 1152-1158
-
-
Schwank, J.R.1
Fleetwood, D.M.2
Winokur, P.S.3
Dressendorfer, P.V.4
Turpin, D.C.5
Sanders, D.T.6
-
14
-
-
0036947655
-
Physical model for enhanced interface-trap formation at low dose rates
-
Dec.
-
S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, S. T. Pantelides, "Physical model for enhanced interface-trap formation at low dose rates," IEEE Trans. Nucl. Sci., Vol. 49, No. 6, pp. 2650-2655, Dec. 2002.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, Issue.6
, pp. 2650-2655
-
-
Rashkeev, S.N.1
Cirba, C.R.2
Fleetwood, D.M.3
Schrimpf, R.D.4
Witczak, S.C.5
Michez, A.6
Pantelides, S.T.7
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