메뉴 건너뛰기




Volumn , Issue , 2004, Pages 42-46

Effect of passivation on the enhanced low dose rate sensitivity of national LM124 operational amplifiers

Author keywords

Dose rate enhancment factor; ELDRS; Enhanced low dose rate sentitivity; Hydrogen; LM124; Nitride; Operational amplifier; Passivation; Secondary ion mass spectrometer; SIMS; Total dose irradiation

Indexed keywords

DOSIMETRY; ELECTRONIC EQUIPMENT TESTING; FABRICATION; HYDROGEN; INTEGRATED CIRCUITS; IRRADIATION; MASS SPECTROMETERS; NITRIDES; PASSIVATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SENSITIVITY ANALYSIS;

EID: 11044225934     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (15)

References (14)
  • 6
    • 0024891801 scopus 로고
    • An improved standard total dose test for CMOS space electronics
    • Dec.
    • D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. L. Pease, "An improved standard total dose test for CMOS space electronics," IEEE Trans. Nucl. Sci., Vol. 36, No. 6, pp. 1963-1970, Dec. 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.36 , Issue.6 , pp. 1963-1970
    • Fleetwood, D.M.1    Winokur, P.S.2    Riewe, L.C.3    Pease, R.L.4
  • 8
    • 0018468948 scopus 로고
    • Two-stage process for buildup of radiation-induced interface states
    • May
    • P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, "Two-Stage Process for Buildup of Radiation-Induced Interface States," J. Appl. Phys., Vol. 50, No. 5, pp. 3492-3495, May 1979.
    • (1979) J. Appl. Phys. , vol.50 , Issue.5 , pp. 3492-3495
    • Winokur, P.S.1    Boesch Jr., H.E.2    McGarrity, J.M.3    McLean, F.B.4
  • 9
    • 0019242095 scopus 로고
    • A framework for understanding radiation-induced interface states in SiO2 MOS structures
    • Dec.
    • F. B. McLean, "A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures," IEEE Trans. Nucl. Sci., Vol. 27, No. 6, pp. 1651-1657, Dec. 1980.
    • (1980) IEEE Trans. Nucl. Sci. , vol.27 , Issue.6 , pp. 1651-1657
    • McLean, F.B.1
  • 10
    • 0024167906 scopus 로고
    • Formation of interface traps in MOSFETs during annealing following low temperature irradiation
    • Dec.
    • N. S. Saks, R. B. Klein, and D. L. Griscom, "Formation of Interface Traps in MOSFETs During Annealing Following Low Temperature Irradiation," IEEE Trans. Nucl. Sci., Vol. 35, No. 6, pp. 1234-1240, Dec. 1988.
    • (1988) IEEE Trans. Nucl. Sci. , vol.35 , Issue.6 , pp. 1234-1240
    • Saks, N.S.1    Klein, R.B.2    Griscom, D.L.3
  • 11
    • 0025590783 scopus 로고
    • Observation of H+ motion during interface trap formation
    • Dec.
    • N. S. Saks and D. B. Brown, "Observation of H+ Motion During Interface Trap Formation," IEEE Trans. Nucl. Sci., Vol. 37, No. 6, pp. 1624-1631, Dec. 1990.
    • (1990) IEEE Trans. Nucl. Sci. , vol.37 , Issue.6 , pp. 1624-1631
    • Saks, N.S.1    Brown, D.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.