Effects of device aging on microelectronics radiation response and reliability

Microelectronics Reliability

Volumn 47, Issue 7, 2007, Pages 1075-1085

  Fleetwood, D M ^a   Rodgers, M P ^a   Tsetseris, L ^b   Zhou, X J ^a   Batyrev, I ^b   Wang, S ^b   Schrimpf, R D ^a   Pantelides, S T ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b VU Station B   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; INTEGRATED CIRCUITS; MOS DEVICES; RADIATION EFFECTS; THERMAL STRESS; THERMODYNAMIC STABILITY;

AGING TIME; FIRST-PRINCIPLES CALCULATIONS; RADIATION RESPONSE; TEMPERATURE INSTABILITY;

MICROELECTRONICS;

EID: 34249742156     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.06.009     Document Type: Article

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