Reactions of hydrogen with Si-SiO 2 interfaces

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2262-2268

  Pantelides, S T ^a,b,c   Rashkeev, S N ^a,b   Buczko, R ^a,b,c,d   Fleetwood, D M ^a,e   Schrimpf, R D ^a,e  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d POLISH ACADEMY OF SCIENCES   (Poland)

^e VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC BARRIER; SUBOXIDE BONDS;

ANNEALING; CHEMICAL BONDS; ELECTRIC FIELDS; ELECTRON TRAPS; HYDROGEN; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; SILICA;

RADIATION EFFECTS;

EID: 0034451168     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903763     Document Type: Conference Paper

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