Physical model for the low-dose-rate effect in bipolar devices

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3655-3660

  Boch, J ^a,b   Saigne F ^b   Schrimpf, R D ^a,c   Vaille J R ^b   Dusseau, L ^a,b   Lorfevre E ^d  

^a IEEE   (France)

^b UNIV MONTPELLIER   (France)

^c VANDERBILT UNIVERSITY   (United States)

^d CNES   (France)

Author keywords

Bipolar junction transistor; Elevated temperature irradiation; Enhanced low dose rate sensitivity (ELDRS); Initial recombination; Switching experiment; Total dose

Indexed keywords

ELEVATED TEMPERATURE IRRADIATION; ENHANCED LOW-DOSE-RATE SENSITIVITY (ELDRS); INITIAL RECOMBINATION; SWITCHING EXPERIMENT; TOTAL DOSE;

DOSIMETERS; RADIATION EFFECTS; THERMAL EFFECTS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 33846267655     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886008     Document Type: Conference Paper

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