Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 233-244

  Fiegna, Claudia ^a,b   Yang, Yang ^c,d   Sangiorgi, Enrico ^a,b   O'Neill, Anthony G ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b Italian Universities Nanoelectronic Team   (Italy)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d Krasnow Institute for Advanced Study   (United States)

Author keywords

CMOS; Numerical simulation; Self heating; Silicon on insulator (SOI)

Indexed keywords

CALIBRATION; COMPUTER SIMULATION; MONTE CARLO METHODS; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

DRIFT-DIFFUSION ELECTROTHERMAL SIMULATION; ELECTROTHERMAL DEVICE; SELF-HEATING EFFECTS;

MOSFET DEVICES;

EID: 37749019234     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911354     Document Type: Article

References (60)

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