Monte-Carlo simulation of decananometric double-gate SOI devices: Multi-Subband vs. 3D-electron gas with quantum corrections

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn 2006-January, Issue , 2006, Pages 162-165

  Riolino, I ^a   Braccioli, M ^b   Lucci, L ^a   Esseni, D ^a   Fiegna, C ^b   Palestri, P ^a   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b ARCES Center   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON GAS; INTELLIGENT SYSTEMS; SOLID STATE DEVICES;

CARRIER QUANTIZATION; DOUBLE GATE SOI; EFFICIENT SCHEMES; MONTE CARLO SIMULATORS; QUANTUM CORRECTION; SOI DEVICES; SUB-100 NM; SUBBANDS;

MONTE CARLO METHODS;

EID: 84957871180     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/essder.2006.307663     Document Type: Conference Paper

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