An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 802-808

  Esseni, David ^a   Mastrapasqua, Marco ^b   Celler, George K ^b   Fiegna, Claudio ^c   Selmi, Luca ^a   Sangiorgi, Enrico ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b AGERE SYSTEMS   (United States)

^c UNIVERSITY OF FERRARA   (Italy)

Author keywords

Deep submicron MOSFETs; Double gate; Lowfield mobility; Silicon thickness dependence; Ultrathin SOI MOSFETs

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTRON MOBILITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THRESHOLD VOLTAGE;

DOUBLE-GATE MODE; LOW FIELD MOBILITY; SILICON THICKNESS DEPENDENCE; ULTRATHIN SILICON ON INSULATOR TRANSISTORS;

MOSFET DEVICES;

EID: 0037870335     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.807444     Document Type: Article

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