The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1514-1521

  Kaczer, Ben ^b   Degraeve, Robin ^b   Pangon, Nadege ^b   Groeseneken, Guido ^a,b  

^a IEEE

^b IMEC   (Belgium)

Author keywords

Charge carrier processes; Dielectric breakdown; MOS devices; Reliability estimation; Stress; Temperature; Thermal effects

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; DEGRADATION; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE OPERATIONS; LOGIC DEVICES; RELIABILITY; SILICA;

DIELECTRIC BREAKDOWN; ELECTRICAL STRESS; GATE OXIDE FILMS; OXIDE DEFECT;

THIN FILMS;

EID: 0034225988     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848301     Document Type: Article

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