Measurement of thermal conductivity of buried oxides of silicon-on-insulator wafers fabricated by separation by implantation of oxygen technology

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1896-1898

  He, Ping ^a   Liu, Litian ^a   Tian, Lilin ^a   Li, Zhijian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY RESISTANCE; BURIED OXIDES; DEVICE ENGINEERING; IMPROVED METHODS; SEPARATION BY IMPLANTATION OF OXYGENS; SILICON ON INSULATOR WAFERS; SIMOX TECHNOLOGIES; SIZE EFFECTS; SOI DEVICES; SOI WAFERS;

OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SEPARATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

THERMAL CONDUCTIVITY;

EID: 79955997863     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506784     Document Type: Article

References (3)

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2. K. E. Goodson, M. I. Flik, L. T. Su, and D. A. Atoniadis, IEEE Electron Device Lett. 14, 490 (1993). edl EDLEDZ 0741-3106
3. K. E. Goodson, M. I. Flik, L. T. Su, and D. A. Atoniadis, ASME J. Heat Transfer 116, 317 (1994). 97l JHTRAO 0022-1481