Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2842-2850

  Esseni, David ^b   Mastrapasqua, Marco ^a,c   Celler, George K ^a,c   Fiegna, Claudio ^a,d   Selmi, Luca ^b   Sangiorgi, Enrico ^a,b  

^a IEEE

^b UNIVERSITY OF UDINE   (Italy)

^c AGERE SYSTEMS   (United States)

^d UNIVERSITY OF FERRARA   (Italy)

Author keywords

Mobility; SOI MOSFETs; SOI performance; Ultrathin silicon films

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; HOLE MOBILITY; MOS DEVICES; MOSFET DEVICES; PHONONS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; ULTRATHIN FILMS;

PHONON SCATTERING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035696689     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974714     Document Type: Article

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