Carrier quantization in SOI MOSFETs using an effective potential based Monte-Carlo tool

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 407-410

  Palestri, P ^a   Esseni, D ^a   Abramo, A ^a   Clerc, R ^b   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER QUANTIZATION; EFFECTIVE POTENTIALS; SOI-MOSFETS;

EID: 14844291284     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256900     Document Type: Conference Paper

References (12)

1. N. Sana, A. Hiroki, and K. Maisuzawa, "Device Modeling and Simulations Toward Sub-lOnm Semiconductor Devices," IEEE Trans, on Nanotechnology, vol. 1, no. 1, pp. 63-71, 2002.
2. D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, "Study of Low Field Electron Transport in Ultra-Thin Single and Double Gate SOI MOSFETs,"in IEDMTechnicalDigesf, pp, 719-722,2002.
3. H. Tsudiiya,-B. Fischer, and K. Hess, "A Full-BAnd Monte Carlo Model for Silicon Nanoscale Devices with a Quantum Mechanical Correction of the Potential," in IEDM Technical Digest, pp. 283-286,2000.
4. M. G. Ancona and G. J. Iafrate, "Quantum Correction to the Equation of State of an Electron Gas in a Semiconductor," Physical Review B, vol, 39, no. 13, pp. 9536-9540, 1989
5. A. Wettstein, A. Schenk, and W. Fichtner, "Quantum Device-Simulation with the Density-Gradient Model on Unstructured Grids" IEEE Trans. on Electron Devices, vol. 48, no. 2, pp. 279-283,2001.
6. D. K. Ferry, R. Akis, and D. Vasileska, "Quantum Effects in MOSFETs: Use of an Effective Potential in 3D Monte Carlo Simulation of Ultra-Short Channel Devices," in IEDM Technical Digest, pp. 287-290, 2000.
7. integrated Systems Engineering AG, Zurich, Switzerland, DESSIS-ISE release 8. 0, 2002.
8. K Venturi and A. Gherti, "Assessment of Accuracy Limitations of Full Band Monte Carlo Device Simulation," in Proc. SISPAD, pp, 343-346, 1997.
9. P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, and E. Sangiorgi, "Coupled Monte Carlo Simulation of Si and SiOa Transport in MOS Capacitors," in Proc. SISPAD, pp. 38-41, 2000.
10. P. Palestri, L. Selmi, E. Sangiorgi, M. Pavesi, and F. Widdershoven, "Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors," in ProcEuropean Solid State Device Res. Conf., pp. 296-299, 2000.
11. S. E. Laux, "On Particle-Mesh Coupling in Monfe Carlo Semiconductor Device Simulation," IBM Research Report, 1995.
12. R. Gere, P. Palestri, and A. Abramo, "Investigation on Convergence and Stability of Self-Consistent Monte-Carlo Device Simulations" in Prvc. European Solid State Device Res. Conf., pp. 191-194, 2002.