Quantifying self-heating effects in strained Si MOSFETs with scaling

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn 2006-January, Issue , 2006, Pages 97-100

  Agaiby, Rimoon ^a   O'Neill, Anthony ^a   Olsen, Sarah ^a   Eneman, Geert ^b,c,d   Verheyen, Peter ^b   Loo, Roger ^b   Claeys, Cor ^b,c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; HEATING; MOSFET DEVICES; SEMICONDUCTOR ALLOYS; SILICON;

CONDUCTANCE TECHNIQUES; DEEP SUB-MICRON; DEVICE-SCALING; GATE LENGTH; SELF-HEATING EFFECT; STRAIN RELAXED BUFFERS; STRAINED SI MOSFETS; STRAINED-SI;

SI-GE ALLOYS;

EID: 37749040412     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/essder.2006.307647     Document Type: Conference Paper

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