Self-consistent and efficient electro-thermal analysis for poly/metal gate FinFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Kumar, Satish ^a   Joshi, Rajiv V ^b   Chuang, Ching Te ^b   Kim, Keunwoo ^b   Murthy, Jayathi Y ^a   Schonenberg, Kathy T ^b   Nowak, Edward J ^c  

^a Purdue University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D MODELING; BAND EDGES; DEVICE DIMENSIONS; DEVICE PERFORMANCES; ELECTRICAL TRANSPORT; FINFETS; LEAKAGE POWER; METAL GATES; NANO-SCALE DEVICES; ON CURRENTS; ORDER-OF MAGNITUDES; POLY GATES; POWER DISTRIBUTIONS; SI LAYER; SPATIAL TEMPERATURE DISTRIBUTION; TEMPERATURE RISE; THERMAL ANALYSIS;

ELECTRON DEVICES; GALLIUM ALLOYS; HEATING; METALS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THERMOANALYSIS; THERMOELECTRICITY; THREE DIMENSIONAL;

SMELTING;

EID: 46049111245     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346735     Document Type: Conference Paper

References (10)

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