Joule heating under quasi-ballistic transport conditions in bulk and strained silicon devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 307-310

  Pop, Eric ^a,c   Rowlette, Jeremy A ^a   Dutton, Robert W ^a   Goodson, Kenneth E ^b  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; HEAT LOSSES; MONTE CARLO METHODS; PHONONS;

ELECTRO THERMAL PERFORMANCE; JOULE HEATING; QUASI-BALLISTIC TRANSPORT CONDITIONS; STRAINED SILICON DEVICES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33845695095     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201534     Document Type: Conference Paper

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