Impact of self-heating effect on long-term reliability and performance degradation in CMOS circuits

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 1, 2006, Pages 17-27

  Semenov, Oleg ^a,b   Vassighi, Arman ^a,b,c   Sachdev, Manoj ^a,b  

^a IEEE   (Canada)

^b UNIVERSITY OF WATERLOO   (Canada)

^c INTEL CORPORATION   (United States)

Author keywords

CMOS technology scaling; Long term reliability; Performance degradation; Self heating effect

Indexed keywords

METALLIZATION LIFETIME; PERFORMANCE DEGRADATION; SELF-HEATING EFFECT; SILICON-ON-INSULATOR (SOI) CMOS CIRCUITS; TIME-TO-BREAKDOWN (TBD); VERY LARGE SCALE INTEGRATIONS (VLSIS);

DEGRADATION; ELECTRIC HEATING; ELECTRIC POWER DISTRIBUTION; RELIABILITY; TECHNOLOGY;

NETWORKS (CIRCUITS);

EID: 33645832552     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.870340     Document Type: Article

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