Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 141-144

  Lin, Hong Nien ^a   Chen, Hung Wei ^b   Ko, Chih Hsin ^b   Ge, Chung Hu ^b   Lin, Horng Chih ^a   Huang, Tiao Yuan ^a   Lee, Wen Chin ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ESTIMATION; COMPRESSIVE STRENGTH; EMBEDDED SYSTEMS; GAIN CONTROL; SEMICONDUCTING SILICON COMPOUNDS; VELOCITY MEASUREMENT;

CHANNEL BACKSCATTERING RATIOS; INJECTION VELOCITY; UNIAXIAL COMPRESSIVE STRAIN;

MOSFET DEVICES;

EID: 33847749489     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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