Thermal simulation techniques for nanoscale transistors

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn 2005, Issue , 2005, Pages 225-228

  Rowlette, Jeremy ^a,c   Pop, Eric ^a   Sinha, Sanjiv ^a,b   Panzer, Mathew ^a   Goodson, Kenneth ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

^c Bldg 530 ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATIONS (BTE); ELECTROTHERMAL PHENOMENA; NANOSCALE TRANSISTORS; THERMAL SIMULATIONS;

BALLISTICS; COMPUTER SIMULATION; COUPLINGS; ELECTRON TRANSPORT PROPERTIES; LEAKAGE CURRENTS; MONTE CARLO METHODS; PHONONS; SEMICONDUCTOR DIODES;

TRANSISTORS;

EID: 33751438797     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2005.1560068     Document Type: Conference Paper

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