Innovative materials, devices, and CMOS technologies for low-power mobile multimedia

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 96-130

  Skotnicki, Thomas ^a   Fenouillet Beranger, Claire ^b   Gallon, Claire ^a   Boeuf, Frederic ^a   Monfray, Stephane ^a   Payet, Fabrice ^a   Pouydebasque, Arnaud ^c   Szczap, Melanie ^a   Farcy, Alexis ^a   Arnaud, Franck ^a   Clerc, Sylvain ^a   Sellier, Manuel ^a   Cathignol, Augustin ^a   Schoellkopf, Jean Pierre ^a   Perea, Ernesto ^a   Ferrant, Richard ^a   Mingam, Hervé ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c NXP SEMICONDUCTORS   (France)

Author keywords

32 nm; CMOS; Double gate; Emerging technologies; FinFET; Fully depleted silicon on insulator (FDSOI); Gate dielectric; Germanium; H K; Low power; Metallic gate; Mobile; Mobility; MOSFET; Multimedia; Multithreshold voltage; Nanotechnologies; Power dissipation; Roadmap; Shallow junction; Silicon; Silicon on nothing (SON); SRAM; Static noise margin (SNM); Strain; Technology; Thin body; Thin BOX; Variability

Indexed keywords

ENERGY DISSIPATION; GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

FULLY DEPLETED SILICON-ON-INSULATOR (FDSOI); LOW-POWER MOBILE MULTIMEDIA; METALLIC GATE; MULTITHRESHOLD VOLTAGE; SILICON-ON-NOTHING (SON); STATIC NOISE MARGIN (SNM);

CMOS INTEGRATED CIRCUITS;

EID: 37749004171     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911338     Document Type: Article

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